Resist under layer film composition and patterning process

ABSTRACT

The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3). There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a resist under layer film compositionfor fine patterning in a manufacturing process of a semiconductorapparatus and the like, and to a patterning process.

Description of the Related Art

In recent years, double patterning which includes repeating lithographyand etching steps (LELE, Litho-Etch-Litho-Etch) has been used to forminterconnect with high density by three-dimensional gate such asultra-fine and dense Fin-field effect transistor (Fin-FET) or dualdamascene, in which trenches and vias of copper interconnect are formedat the same time. Accordingly, materials capable of filling gaps withhigh aspect ratio and high density have been demanded. Filling gapsmakes the film surface flatten and facilitates focus leveling inlithography, thus enabling patterning with an adequate margin even ifthe focus margin is narrow.

A spin coating method has been commonly used for planarizing a substratehaving gaps. Otherwise, the gaps can be filled by forming an amorphouscarbon film by chemical vapor deposition (CVD) method, but this methodhas a disadvantage of process cost because the surface becomes unevenand the film surface is required to be ground by chemical mechanicalpolishing (CMP) method to planarize it. Moreover, there is a problemthat the amorphous carbon film formed by the CVD method fails to fillultra-fine gaps with a pitch of 50 nm or less because voids occur in thebottom of the gaps. The ultra-fine gaps with a pitch of 50 nm or lesscan be filled by spin coating of a material containing a large amount oflow molecular weight components.

A liquid immersion lithography makes an angle of incident light to aresist and an underlying layer(s) shallower and substrate reflectionlarger. To suppress the substrate reflection, a multi-layerantireflection film is effectively formed under the resist. A 3-layer(tri-layer) structure in which a hydrocarbon film (a resist under layerfilm) with high carbon density is formed on a substrate, asilicon-containing resist middle layer film is formed thereon, and aresist upper layer film is formed thereon can prevent the substratereflection by the two layers of the hydrocarbon film and thesilicon-containing middle layer film. Thus, the application of thistechnique has been rapidly spreading with use of the liquid immersionlithography.

The resist under layer film is required to have functions such asfilling and planarizing properties by spin coating, high dry-etchingresistance for dry etching a substrate, and optimum optical propertiesfor providing high antireflection effect.

The resist under layer film is also required to have high heatresistance in some cases, for example, when a hard mask layer such asp-Si, SiN, SiON, TiN, ZrO₂, and HfO₂ is formed on the resist under layerfilm because these films need a temperature exceeding 300° C. to beformed.

Examples of a resist under layer film material with high heat resistanceinclude a bisnaphthol compound and a novolak resin thereof disclosed inPatent Document 1, bisnaphthol fluorene and a novolak resin thereofdisclosed in Patent Document 2, a novolak resin of naphthol phthaleindisclosed in Patent Document 3, and a novolak resin ofnaphthofluorescein disclosed in Patent Document 4.

In addition, there is a problem of outgas generated in baking forforming a resist under layer film. The outgas component adheres to anupper plate above a hot plate, and when the component drops onto awafer, a defect is generated. To improve the property of filling gaps ofa substrate, monomer components (low molecular weight components) areeffectively added to the resist under layer film composition. However,the more the monomer components are added, the more outgas is generatedin baking at high temperature. In other words, there is a trade-offrelationship between the improvement in filling property and thereduction in outgas. Therefore, a resist under layer film compositionthat can overcome the trade-off relationship has been demanded.

PRIOR ART DOCUMENTS Patent Documents

[Patent Document 1] Japanese Patent No. 4659678

[Patent Document 2] Japanese Patent No. 5336306

[Patent Document 3] Japanese Patent Laid-Open Publication No.2015-018221

[Patent Document 4] Japanese Patent Laid-Open Publication No.2015-018223

SUMMARY OF THE INVENTION

The present invention has been accomplished in view of the abovecircumstances, and an object thereof is to provide a resist under layerfilm composition that has good filling property, generates littleoutgas, and is excellent in dry-etching resistance and heat resistance.

To achieve this object, the present invention provides a resist underlayer film composition comprising a novolak resin having a repeatingunit shown by the formula (1) and either or both of a novolak resinhaving a repeating unit shown by the formula (2) and a bisnaphtholderivative shown by the formula (3),

wherein R¹ and R² represent a hydrogen atom, a linear, branched, orcyclic alkyl group having 1 to 10 carbon atoms, an alkenyl group having2 to 8 carbon atoms, an aryl group having 6 to 10 carbon atoms, or anaralkyl group having 7 to 10 carbon atoms, in which the alkyl group, thealkenyl group, the aryl group, and the aralkyl group may contain afluorine atom(s) and may further contain a hydroxyl group, an alkoxygroup, an acyl group, a sulfoxide group, a sulfo group, or an esterbond, and 10% or more of a total of R¹ and R² are groups containing atleast one fluorine atom; R³, R⁴, R¹¹, and R²² represent a hydrogen atom,a hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, a linear,branched, or cyclic alkyl group having 1 to 10 carbon atoms, an alkenylgroup having 2 to 10 carbon atoms, or an aryl group having 6 to 10carbon atoms, in which the alkyl group, the alkenyl group, and the arylgroup may contain a hydroxyl group, an alkoxy group, an acyloxy group,an ether group, or a sulfide group; R¹⁸ and R¹⁹ represent a halogen atomor the same group as R³, R⁴, R¹¹, and R¹²; R⁵, R⁶, R²³, R²⁴, R²⁰, andR²¹ represent a hydrogen atom, or R⁵, R¹³, and R²⁰ may bond to R⁶, R¹⁴,and R²¹ respectively to form an ether bond; R⁷ and R¹⁵ represent ahydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenylgroup having 2 to 10 carbon atoms, or an aryl group having 6 to 10carbon atoms, in which the alkyl group, the alkenyl group, and the arylgroup may contain a hydroxyl group, an alkoxy group, an acyloxy group,an ether group, a sulfide group, a chloro group, or a nitro group; R⁹,R¹⁰, R¹⁶, and R¹⁷ represent a hydrogen atom, an acid-labile group, aglycidyl group, or a linear, branched, or cyclic alkyl, acyl, oralkoxycarbonyl group having 1 to 10 carbon atoms; X₁, X₂, and X₃represent a single bond or a linear, branched, or cyclic divalenthydrocarbon group having 1 to 38 carbon atoms and optionally containinga hydroxyl group, a carboxyl group, an ether group, or a lactone ring,when X₁ is a divalent hydrocarbon group, R⁵ and R⁶ may bond to carbonatoms in X₁ to form an ether bond, when X₂ is a divalent hydrocarbongroup, R¹³ and R¹⁴ may bond to carbon atoms in X₂ to form an ether bond,and when X₃ is a divalent hydrocarbon group, R²⁰ and R²¹ may bond tocarbon atoms in X₃ to form an ether bond; and a, b, c, d, g, h, i, j, k,l, m, and n are each 1 or 2.

Such a resist under layer film composition has good filling property,generates little outgas, and is excellent in dry-etching resistance andheat resistance.

The resist under layer film composition preferably comprises the novolakresin having the repeating unit shown by the formula (1), the novolakresin having the repeating unit shown by the formula (2), and thebisnaphthol derivative shown by the formula (3).

The composition containing all three components of the novolak resinhaving the repeating unit shown by the formula (1), the novolak resinhaving the repeating unit shown by the formula (2), and the bisnaphtholderivative shown by the formula (3) can achieve the improvement infilling property and the reduction in outgas with good balance.

The novolak resin having the repeating unit shown by the formula (1)preferably contains one or more groups selected from the formulae (4)-1to (4)-5 as R¹ and/or R² in the formula (1),

wherein R represents a hydrogen atom or an alkyl group having 1 to 4carbon atoms; R⁰ represents a hydrogen atom, a methyl group, an acetylgroup, or a trifluoroacetyl group; Rf represents a fluorine atom, alinear, branched, or cyclic alkyl group having 1 to 9 carbon atoms, analkenyl group having 2 to 8 carbon atoms, an aryl group having 6 to 10carbon, an aralkyl group having 7 to 10 carbon atoms, or an alkoxy grouphaving 1 to 10 carbon atoms, in which these groups contain at least onefluorine atom and may further contain a hydroxyl group or an alkoxygroup; R²² represents a hydrogen atom, a methyl group, or an ethylgroup; and R²³ and R²⁴ represent a hydrogen atom or a linear or branchedalkyl group having 1 to 5 carbon atoms.

When such groups are contained, the amount of outgas generated from theresist under layer film composition can be further reduced. [0017]

A total amount of the novolak resin having the repeating unit shown bythe formula (2) and the bisnaphthol derivative shown by the formula (3)is preferably 5 to 100 parts by mass with respect to 1 part by mass ofthe novolak resin having the repeating unit shown by the formula (1).

Such a ratio enables the improvement in filling property and thereduction in outgas to be achieved with particularly good balance.

The resist under layer film composition preferably further comprises anorganic solvent.

The organic solvent enables the concentration and the viscosity of theresist under layer film composition to be adjusted, and improvescompatibility.

The resist under layer film composition preferably further comprises anacid generator and/or a crosslinking agent.

These components promote crosslinking curing reaction of the resistunder layer film composition.

Furthermore, the present invention provides a patterning process forforming a pattern in a substrate by lithography, comprising: forming aresist under layer film on a substrate to be processed by using theabove-described resist under layer film composition; forming asilicon-containing middle layer film on the resist under layer film byusing a silicon-containing middle layer film composition; forming aresist upper layer film on the silicon-containing middle layer film byusing a resist upper layer film composition; forming a resist pattern inthe resist upper layer film by exposure of a pattern circuit region ofthe resist upper layer film and development; transferring the pattern tothe silicon-containing middle layer film by etching using the resistupper layer film having the formed resist pattern as a mask;transferring the pattern to the resist under layer film by etching usingthe silicon-containing resist middle layer film having the transferredpattern as a mask; forming the pattern in the substrate to be processedby etching using the resist under layer film having the transferredpattern as a mask.

Furthermore, the present invention provides a patterning process forforming a pattern in a substrate by lithography, comprising: forming aresist under layer film on a substrate to be processed by using theabove-described resist under layer film composition; forming aninorganic hard mask intermediate film selected from a silicon oxidefilm, a silicon nitride film, a silicon oxynitride film, a siliconcarbide film, a polysilicon film, a titanium nitride film, a titaniumoxide film, a titanium carbide film, a zirconium oxide film, and ahafnium oxide film on the resist under layer film; forming a resistupper layer film on the inorganic hard mask intermediate film by using aresist upper layer film composition; forming a resist pattern in theresist upper layer film by exposure of a pattern circuit region of theresist upper layer film and development; transferring the pattern to theinorganic hard mask intermediate film by etching using the resist upperlayer film having the formed resist pattern as a mask; transferring thepattern to the resist under layer film by etching using the inorganichard mask intermediate film having the transferred pattern as a mask;forming the pattern in the substrate to be processed by etching usingthe resist under layer film having the transferred pattern as a mask.

Furthermore, the present invention provides a patterning process forforming a pattern in a substrate by lithography, comprising: forming aresist under layer film on a substrate to be processed by using theabove-described resist under layer film composition; forming aninorganic hard mask intermediate film selected from a silicon oxidefilm, a silicon nitride film, a silicon oxynitride film, a siliconcarbide film, a polysilicon film, a titanium nitride film, a titaniumoxide film, a titanium carbide film, a zirconium oxide film, and ahafnium oxide film on the resist under layer film; forming an organicantireflection film on the inorganic hard mask intermediate film;forming a resist upper layer film on the organic antireflection film byusing a resist upper layer film composition, thereby forming a 4-layerresist film; forming a resist pattern in the resist upper layer film byexposure of a pattern circuit region of the resist upper layer film anddevelopment; transferring the pattern to the organic antireflection filmand the inorganic hard mask intermediate film by etching using theresist upper layer film having the formed resist pattern as a mask;transferring the pattern to the resist under layer film by etching usingthe inorganic hard mask intermediate film having the transferred patternas a mask; forming the pattern in the substrate to be processed byetching using the resist under layer film having the transferred patternas a mask.

Furthermore, the present invention provides a patterning process forforming a pattern in a substrate by lithography, comprising: forming aresist under layer film on a substrate to be processed by using theabove-described resist under layer film composition; forming aninorganic hard mask intermediate film selected from a silicon oxidefilm, a silicon nitride film, a silicon oxynitride film, a siliconcarbide film, a polysilicon film, a titanium nitride film, a titaniumoxide film, a titanium carbide film, a zirconium oxide film, and ahafnium oxide film on the resist under layer film; forming a hydrocarbonfilm on the inorganic hard mask intermediate film by using a hydrocarbonfilm composition by spin coating; forming a silicon-containing middlelayer film on the hydrocarbon film by using a silicon-containing middlelayer film composition; forming a resist upper layer film on thesilicon-containing middle layer film by using a resist upper layer filmcomposition, thereby forming a S-layer resist film; forming a resistpattern in the resist upper layer film by exposure of a pattern circuitregion of the resist upper layer film and development; transferring thepattern to the silicon-containing middle layer film by etching using theresist upper layer film having the formed resist pattern as a mask;transferring the pattern to the hydrocarbon film by etching using thesilicon-containing middle layer film having the transferred pattern as amask; transferring the pattern to the inorganic hard mask intermediatefilm by etching using the hydrocarbon film having the transferredpattern as a mask; transferring the pattern to the resist under layerfilm by etching using the inorganic hard mask intermediate film havingthe transferred pattern as a mask; forming the pattern in the substrateto be processed by etching using the resist under layer film having thetransferred pattern as a mask.

The patterning process using the inventive resist under layer filmcomposition that has good filling property, generates little outgas, andis excellent in dry-etching resistance and heat resistance cansignificantly reduce defects at fine processing in the manufacturingprocess of a semiconductor apparatus and the like.

The inorganic hard mask intermediate film is preferably formed by a CVDmethod, an ALD method, or a sputtering method.

Such methods are suitable for forming the inorganic hard maskintermediate film.

It is preferred that the resist upper layer film composition do notcontain a polymer having a silicon atom, and the etching of the resistunder layer film using the silicon-containing middle layer film or theinorganic hard mask intermediate film as a mask be performed with anetching gas containing an oxygen gas or a hydrogen gas.

In this manner, removal of the resist upper layer film and etching ofthe resist under layer film can be performed at the same time.

As mentioned above, the inventive resist under layer film compositionhas good filling property, generates little outgas, and can form aresist under layer film having excellent dry-etching resistance and heatresistance. The resist under layer film is also improved in filmthickness uniformity. In addition, the inventive patterning processusing such a resist under layer film composition allows a substrate tobe sufficiently embedded, prevents generation of outgas, and thussignificantly reduces defects at fine processing in the manufacturingprocess of a semiconductor apparatus and the like. Accordingly, theresist under layer film composition and the patterning process of thepresent invention are especially suitable for manufacturing athree-dimension device such as Fin-FET, which requires filling a trenchpattern having narrow pitch and inhibiting generation of outgas duringbaking of the resist under layer film that may cause defects.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A to 1F show an example of the inventive patterning process by3-layer process using a silicon-containing middle layer film. FIG. 1Ashows a step of forming a multi-layer film. FIG. 1B shows a step ofexposure. FIG. 1C shows a step of development. FIG. 1D shows a step oftransferring the resist pattern. FIG. 1E shows a step of transferringthe silicon-containing middle layer film pattern. FIG. 1F shows a stepof transferring the resist under layer film pattern.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As mentioned above, it has been desired to develop a resist under layerfilm composition that has good filling property and generates littleoutgas. To improve filling property, monomer components are effectivelyadded to the resist under layer film composition. However, when monomercomponents are added, the monomer components evaporate at baking togenerate outgas, and the outgas adheres to an upper plate above a hotplate. Drop of the substance adhering to the upper plate causes adefect, so that the improvement performance in filling property and theoutgas prevention performance have a trade-off relationship. The presentinventors have intensively studied to formulate a resist under layerfilm composition that has good filling property and generates littleoutgas, and found that a resist under layer film in which the side of asubstrate with gaps contains many monomer components required forfilling, and the surface layer side contains many polymer components iseffective in both the improvement in filling property and the inhibitionof outgas generation.

The present inventors have further studied and consequently found that aresist under layer film composition containing a novolak resin having arepeating unit shown by the formula (1) and either or both of a novolakresin having a repeating unit shown by the formula (2) and a bisnaphtholderivative shown by the formula (3) can improve filling property andinhibit generation of outgas even if the composition contains a largeamount of monomer components, thereby brought the present invention tocompletion.

That is, the present invention is a resist under layer film compositioncomprising a novolak resin having a repeating unit shown by the formula(1) and either or both of a novolak resin having a repeating unit shownby the formula (2) and a bisnaphthol derivative shown by the formula(3),

wherein R¹ and R² represent a hydrogen atom, a linear, branched, orcyclic alkyl group having 1 to 10 carbon atoms, an alkenyl group having2 to 8 carbon atoms, an aryl group having 6 to 10 carbon atoms, or anaralkyl group having 7 to 10 carbon atoms, in which the alkyl group, thealkenyl group, the aryl group, and the aralkyl group may contain afluorine atom(s) and may further contain a hydroxyl group, an alkoxygroup, an acyl group, a sulfoxide group, a sulfo group, or an esterbond, and 10% or more of a total of R¹ and R² are groups containing atleast one fluorine atom; R³, R⁴, R¹¹, and R¹² represent a hydrogen atom,a hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, a linear,branched, or cyclic alkyl group having 1 to 10 carbon atoms, an alkenylgroup having 2 to 10 carbon atoms, or an aryl group having 6 to 10carbon atoms, in which the alkyl group, the alkenyl group, and the arylgroup may contain a hydroxyl group, an alkoxy group, an acyloxy group,an ether group, or a sulfide group; R¹⁸ and R¹⁹ represent a halogen atomor the same group as R³, R⁴, R¹¹, and R¹²; R⁵, R⁶, R¹³, R¹⁴, R²⁰, andR²¹ represent a hydrogen atom, or R⁵, R¹³, and R²⁰ may bond to R⁶, R¹⁴,and R²¹ respectively to form an ether bond; R⁷ and R¹⁵ represent ahydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenylgroup having 2 to 10 carbon atoms, or an aryl group having 6 to 10carbon atoms, in which the alkyl group, the alkenyl group, and the arylgroup may contain a hydroxyl group, an alkoxy group, an acyloxy group,an ether group, a sulfide group, a chloro group, or a nitro group; R⁹,R¹⁰, R¹⁶, and R¹⁷ represent a hydrogen atom, an acid-labile group, aglycidyl group, or a linear, branched, or cyclic alkyl, acyl, oralkoxycarbonyl group having 1 to 10 carbon atoms; X₁, X₂, and X₃represent a single bond or a linear, branched, or cyclic divalenthydrocarbon group having 1 to 38 carbon atoms and optionally containinga hydroxyl group, a carboxyl group, an ether group, or a lactone ring,when X₁ is a divalent hydrocarbon group, R⁵ and R⁶ may bond to carbonatoms in X₁ to form an ether bond, when X₂ is a divalent hydrocarbongroup, R¹³ and R¹⁴ may bond to carbon atoms in X₂ to form an ether bond,and when X₃ is a divalent hydrocarbon group, R²° and R²¹ may bond tocarbon atoms in X₃ to form an ether bond; and a, b, c, d, g, h, i, j, k,l, m, and n are each 1 or 2.

Hereinafter, the present invention will be described in detail, but thepresent invention is not limited thereto.

<Resist Under Layer Film Composition>

The inventive resist under layer film composition contains the novolakresin having the repeating unit shown by the formula (1) and either orboth of the novolak resin having the repeating unit shown by the formula(2) and the bisnaphthol derivative shown by the formula (3). When such aresist under layer film composition is used, the novolak resincontaining the repeating unit shown by the formula (1) with fluorineatoms in a prescribed amount or more covers the film surface during spincoating. The presence of the fluorine-containing layer enablesgeneration of outgas to be inhibited even when the resist under layerfilm composition containing monomer components for improving fillingproperty is baked at high temperature.

The property of filling gaps of a substrate is further improved byadding the bisnaphthol derivative shown by the formula (3) as a monomercomponent. Generally, addition of such a monomer component increasesgeneration of outgas in baking. However, as mentioned above, in theinventive resist under layer film composition, the novolak resincontaining the repeating unit shown by the formula (1) with fluorineatoms in a prescribed amount or more moves to the surface of the resistunder layer film at coating, and a resin layer containing a large amountof this resin is formed at the surface of the resist under layer film.Since the resist under layer film surface is coated with the resin layerof the fluorine-containing bisnaphthol novolak resin, even when monomercomponents are contained, it is possible to inhibit the monomercomponents from evaporating from the resist under layer film surface andcausing outgas during baking. This is an effective means to inhibitgeneration of outgas and improve filling property. Filling property canbe further improved by increasing the amount of monomer components orusing lower molecular weight components.

In addition, formation of the fluorine-containing layer at the resistunder layer film surface is also effective in prevention of damage tothe resist under layer film surface when a silicon-containing middlelayer film (SOG film) on the resist under layer film is removed with ahydrofluoric acid aqueous solution or when a TiN film or a BoronPhosphorus Silicate Glass (BPSG) film is removed with an alkali removingliquid, Standard Clean (SC) 1. This is because water-repellency offluorine can prevent the hydrofluoric acid aqueous solution and the SC1from soaking into the resist under layer film.

Further advantageously, a naphthalene ring can inhibit reflection fromthe resist under layer film because of its relatively small absorptionat 193 nm wavelength of ArF excimer laser, and exhibits high dry-etchingresistance because it is a condensed aromatic ring.

In some cases, above the resist under layer film, not only asilicon-containing middle layer film is formed by spin coating, but alsoan inorganic film, such as a SiON film and a TiN film, which serves asboth an antireflection film and a hard mask is formed. The SiON film hasnot only excellent antireflection effect but also higher dry-etchingresistance than the silicon-containing middle layer film formed by spincoating. The TiN film has advantages of high dry-etching resistance andremovability with an alkali removing liquid such as SC1. Since the SiONfilm and the TiN film require a substrate temperature of 300° C. orhigher to be formed, a resist under layer film having inadequate heatresistance cannot be used in a method including forming such aninorganic film even if the dry-etching resistance and other propertiesare excellent. By contrast, a resist under layer film formed from theinventive resist under layer film composition has adequate heatresistance, so that it can be suitably used even when an inorganic filmthat needs to be heated at 300° C. or higher is formed, as mentionedabove.

When an under layer film solution is applied onto a substrate havinggaps, for example, a hole pattern, bubbles exist in the bottoms of theholes just after the application, and the bottoms of the holes arefilled after baking at high temperature. This indicates that the resinflows to fill the bottoms of the holes in baking, and the bubbles(voids) move toward the under layer film surface and then disappear.

In general, when a solution containing a resin is applied by spincoating at a low speed of 500 rpm or less and the solvent is thenevaporated by baking, the film thickness becomes nonuniform. Bycontrast, when the solution is applied by spin coating at 700 rpm ormore, phenomenon of thickness nonuniformity does not occur. Thephenomenon that film thickness becomes nonuniform by low speed spincoating followed by baking is attributable to Marangoni effect.

Marangoni effect is supposed to occur also when an under layer filmresin is baked at high temperature. In the case that a resin materialcomposed of only monomers is used, pull-back phenomenon from wafer edgeand the phenomenon of nonuniform thickness after coating can beexplained by Marangoni effect. Movement of a high-temperature substance,which has low surface tension, toward the film surface decreasestemperature, thereby increasing the surface tension. In general, a filmin which the film surface is covered with a material having low surfacetension is energetically stable. Conversely, Marangoni effect makes thefilm energetically unstable, resulting in thickness nonuniformity.

By contrast, the inventive resist under layer film composition containsa fluorine-containing material with low surface tension (i.e., thenovolak resin having the repeating unit shown by the formula (1)).Therefore, the film surface is covered with the material with lowsurface tension, which resolves instability due to Marangoni effect. Inother words, film thickness uniformity can also be improved.

As mentioned above, the inventive resist under layer film compositioncontains the novolak resin having the repeating unit shown by theformula (1) as an essential component and either or both of the novolakresin having the repeating unit shown by the formula (2) and thebisnaphthol derivative shown by the formula (3). That is, thecomposition may contain the novolak resin having the repeating unitshown by the formula (1) and the novolak resin having the repeating unitshown by the formula (2) but not the bisnaphthol derivative shown by theformula (3), or may contain the novolak resin having the repeating unitshown by the formula (1) and the bisnaphthol derivative shown by theformula (3) but not the novolak resin having the repeating unit shown bythe formula (2). Alternatively, the composition may contain all threecomponents of the novolak resin having the repeating unit shown by theformula (1), the novolak resin having the repeating unit shown by theformula (2), and the bisnaphthol derivative shown by the formula (3).

Above all, the composition preferably contains all three components ofthe novolak resin having the repeating unit shown by the formula (1),the novolak resin having the repeating unit shown by the formula (2),and the bisnaphthol derivative shown by the formula (3).

When the composition contains all three components of the novolak resinhaving the repeating unit shown by the formula (1), the novolak resinhaving the repeating unit shown by the formula (2), and the bisnaphtholderivative shown by the formula (3), both the improvement in fillingproperty and the reduction in outgas can be achieved with betterbalance.

Illustrative examples of the linear, branched, or cyclic divalenthydrocarbon group having 1 to 38 carbon atoms represented by X₁, X₂, andX₃ include linear, branched, or cyclic alkylene, arylene, and aralkylenegroups having 1 to 38 carbon atoms.

Illustrative examples of a bisnaphthol derivative usable as a monomer togive the novolak resins having the repeating unit shown by the formula(1) or (2) include the following compounds. The following compounds canalso be used as the bisnaphthol derivative shown by the formula (3).

In these formulae, R²⁵ represents R¹, R⁹, or R¹⁶, and R²⁶ represents R²,R¹⁰, or R¹⁷. The bisnaphthol derivative to give the novolak resin havingthe repeating unit shown by the formula (1) or (2) may be the same as ordifferent from the bisnaphthol derivative shown by the formula (3) forimproving filling property.

When R⁹, R¹⁰, R¹⁶, and R¹⁷ are acid-labile groups, these groups may bethe same or different. Examples thereof include groups shown by theformulae (A-1) to (A-3) .

In the formula (A-1), R^(L30) represents a tertiary alkyl group having 4to 20, preferably 4 to 15 carbon atoms, a trialkylsilyl group containingalkyl groups having 1 to 6 carbon atoms, an oxoalkyl group having 4 to20 carbon atoms, or a substituent shown by the formula (A-3).Illustrative examples of the tertiary alkyl group include a tert-butylgroup, a tert-amyl group, a 1,1-diethylpropyl group, a1-ethylcyclopentyl group, a 1-butylcyclopentyl group, a1-ethylcyclohexyl group, a 1-butylcyclohexyl group, a1-ethyl-2-cyclopentenyl group, a 1-ethyl-2-cyclohexenyl group, and a2-methyl-2-adamantyl group; illustrative examples of the trialkylsilylgroup include a trimethylsilyl group, a triethylsilyl group, and adimethyl-tert-butylsilyl group; and illustrative examples of theoxoalkyl group include a 3-oxocyclohexyl group, a4-methyl-2-oxooxane-4-yl group, and a 5-methyl-2-oxooxolane-5-yl group.Al is an integer of 0 to 6.

Illustrative examples of the acid-labile group of the formula (A-1)include a tert-butoxycarbonyl group, a tert-butoxycarbonylmethyl group,a tert-amyloxycarbonyl group, a tert-amyloxycarbonylmethyl group, a1,1-diethylpropyloxycarbonyl group, a 1,1-diethylpropyloxycarbonylmethylgroup, a 1-ethylcyclopentyloxycarbonyl group, a1-ethylcyclopentyloxycarbonylmethyl group, a1-ethyl-2-cyclopentenyloxycarbonyl group, a1-ethyl-2-cyclopentenyloxycarbonylmethyl group, a1-ethoxyethoxycarbonylmethyl group, a2-tetrahydropyranyloxycarbonylmethyl group, and a2-tetrahydrofuranyloxycarbonylmethyl group.

Other examples of the tertiary alkyl group include substituents shown bythe formulae (A-1)-1 to (A-1)-10.

In these formulae, each R^(L37) may be the same or different, andrepresents a linear, branched, or cyclic alkyl group having 1 to 10carbon atoms or an aryl group having 6 to 17 carbon atoms; R^(L38)represents a hydrogen atom or a linear, branched, or cyclic alkyl grouphaving 1 to 10 carbon atoms; each R^(L39) may be the same or different,and represents a linear, branched, or cyclic alkyl group having 2 to 10carbon atoms or an aryl group having 6 to 20 carbon atoms; and Al hasthe same meaning as above.

In the formula (A-2), R^(L31) and R^(L32) represent a hydrogen atom or alinear, branched, or cyclic alkyl group having 1 to 18, preferably 1 to10 carbon atoms. Illustrative examples thereof include a methyl group,an ethyl group, a propyl group, an isopropyl group, a n-butyl group, asec-butyl group, a tert-butyl group, a cyclopentyl group, a cyclohexylgroup, a 2-ethylhexyl group, and a n-octyl group. R^(L33) represents amonovalent hydrocarbon group having 1 to 18, preferably 1 to 10 carbonatoms, and optionally containing a heteroatom such as an oxygen atom.For example, there may be mentioned a linear, branched, or cyclic alkylgroup and a group in which a part of hydrogen atoms in these groups issubstituted with a hydroxyl group, an alkoxy group, an oxo group, anamino group, an alkylamino group, or the like. Illustrative examplesthereof include the following substituted alkyl groups.

R^(L31) and R^(L32), R^(L31) and R^(L33), and R^(L32) and R^(L33) may bebonded to form a ring together with the carbon atoms to which thesegroups are bonded; and when the ring is formed, each of R^(L31),R^(L32),and R^(L33) that participate in the ring formation represents alinear or branched alkylene group having 1 to 18, preferably 1 to 10carbon atoms. The carbon number in the ring is preferably 3 to 10,particularly preferably 4 to 10.

Among the acid-labile group shown by the formula (A-2), illustrativeexamples of the linear or branched one include groups of the followingformulae (A-2)-1 to (A-2)-69.

Among the acid-labile groups shown by the formula (A-2), illustrativeexamples of the cyclic one include a tetrahydrofuran-2-yl group, a2-methyltetrahydrofuran-2-yl group, a tetrahydropyran-2-yl group, and a2-methyltetrahydropyran-2-yl group.

The base resins of the novolak resin having the repeating unit shown bythe formula (2) may be linked through a crosslinking acetal group shownby the formula (A-2a) or (A-2b) to form intermolecular or intramolecularcrosslinking.

In these formulae, R^(L40) and R^(L41) represent a hydrogen atom or alinear, branched, or cyclic alkyl group having 1 to 8 carbon atoms.Alternatively, R^(L40) and R^(L41) may be bonded to form a ring togetherwith the carbon atoms to which these groups are bonded. When the ring isformed, R^(L40) and R^(L41) represent a linear or branched alkylenegroup having 1 to 8 carbon atoms. R^(L42) represents a linear, branched,or cyclic alkylene group having 1 to 10 carbon atoms. B1 and D1represent an integer of 0 to 10, preferably 0 to 5. C1 represents aninteger of 1 to 7, preferably 1 to 3.

In these formulae, “A” represents an aliphatic or alicyclic saturatedhydrocarbon group, an aromatic hydrocarbon group, or a heterocyclicgroup having 1 to 50 carbon atoms with a valency of (C1+1); these groupsmay contain a heteroatom, or a part of hydrogen atoms bonded to thecarbon atom in these groups may be substituted with a hydroxyl group, acarboxyl group, a carbonyl group, or a fluorine atom. “A” is preferablya linear, branched, or cyclic alkylene group, alkyltriyl group,alkyltetrayl group having 2 to 4 valency and 1 to 20 carbon atoms, or anarylene group having 6 to 30 carbon atoms; these group may contain aheteroatom, or a part of hydrogen atoms bonded to the carbon atom inthese groups may be substituted with a hydroxyl group, a carboxyl group,an acyl group, or a halogen atom. “B” represents —CO—O—, —NHCO—O—, or—NHCONH—.

Illustrative examples of the crosslinking acetal group shown by theformulae (A-2a) and (A-2b) include groups of the following formulae(A-2)-70 to (A-2)-77.

In the formula (A-3) , R^(L34), R^(L35), and R^(L36) represent amonovalent hydrocarbon group such as a linear, branched, or cyclic alkylgroup having 1 to 20 carbon atoms or a linear, branched, or cyclicalkenyl group having 2 to 20 carbon atoms. These groups may contain aheteroatom such as oxygen, sulfur, nitrogen, and fluorine. R^(L34) andR^(L35), R^(L34) and R^(L36), and R^(L35) and R^(L36) may be bonded toform an aliphatic ring having 3 to 20 carbon atoms together with thecarbon atoms to which these groups are bonded.

Illustrative examples of the tertiary alkyl group shown by the formula(A-3) include a tert-butyl group, a triethylcarbyl group, a1-ethylnorbornyl group, a 1-methylcyclohexyl group, a 1-ethylcyclopentylgroup, a 2-(2-methyl)adamantyl group, a 2-(2-ethyl)adamantyl group, anda tert-amyl group.

Other examples of the tertiary alkyl group include groups of theformulae (A-3)-1 to (A-3)-18.

In the formulae (A-3)-1 to (A-3)-18, each R^(L43) may be the same ordifferent, and represents a linear, branched, or cyclic alkyl grouphaving 1 to 8 carbon atoms, or an aryl group having 6 to 20 carbonatoms, such as a phenyl group. R^(L44) and R^(L46) represent a hydrogenatom or a linear, branched, or cyclic alkyl group having 1 to 20 carbonatoms. R^(L45) represents an aryl group having 6 to 20 carbon atoms,such as a phenyl group.

Furthermore, as shown in the formulae (A-3)-19 and (A-3)-20 below, thepolymer may contain R^(L47) which represents a group with two or morevalency such as an alkylene group and an arylene group to formintermolecular or intramolecular crosslinking. E1 represents an integerof 0 to 8, preferably 0 to 6.

The novolak resin having the repeating unit shown by the formula (1) or(2) may be a co-condensate of a monomer other than the above-describedbisnaphthol derivative. Illustrative examples of the monomer usable inco-condensation include phenol, o-cresol, m-cresol, p-cresol,2,3-dimethylphenol, 2,4-dimethylphenol, 2,5-dimethylphenol,2,6-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol,2,3,5-trimethylphenol, 3,4,5-trimethylphenol, 2-tert-butylphenol,3-tert-butylphenol, 4-tert-butylphenol, 2-phenylphenol, 3-phenylphenol,4-phenylphenol, 3,5-diphenylphenol, 2-naphthylphenol, 3-naphthylphenol,4-naphthylphenol, 4-tritylphenol, resorcinol, 2-methylresorcinol,4-methylresorcinol, 5-methylresorcinol, catechol, 4-tert-butylcatechol,2-methoxyphenol, 3-methoxyphenol, 2-propylphenol, 3-propylphenol,4-propylphenol, 2-isopropylphenol, 3-isopropylphenol, 4-isopropylphenol,2-methoxy-5-methylphenol, 2-tert-butyl-5-methylphenol, pyrogallol,thymol, isothymol, 4,4′-(9H-fluoren-9-ylidene)bisphenol,2,2′-dimethyl-4,4′-(9H-fluoren-9-ylidene)bisphenol,2,2′-diallyl-4,4′-(9H-fluoren-9-ylidene)bisphenol,2,2′-difluoro-4,4′-(9H-fluoren-9-ylidene)bisphenol,2,2′-diphenyl-4,4′-(9H-fluoren-9-ylidene)bisphenol,2,2′-dimethoxy-4,4′-(9H-fluoren-9-ylidene)bisphenol,2,3,2′,3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol,3,3,3′,3′-tetramethyl-2,3,2′,3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol,3,3,3′,3′,4,4′-hexamethyl-2,3,2′,3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol,2,3,2′,3′-tetrahydro-(1,1′)-spirobiindene-5,5′-diol,5,5′-dimethyl-3,3,3′,3′-tetramethyl-2,3,2′,3′-tetrahydro-(1,1′)-spirobiindene-6,6′-diol,1,2-dihydroxynaphthalene, 1,3-dihydroxynaphthalene,1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene,1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene,1,8-dihydroxynaphthalene, 2,3-dihydroxynaphthalene,2,4-dihydroxynaphthalene, 2,5-dihydroxynaphthalene,2,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene,2,8-dihydroxynaphthalene, 1-naphthol, 2-naphthol, 2-methyl-1-naphthol,4-methoxy-1-naphthol, 7-methoxy-2-naphthol, 6-methoxy-2-naphthol,3-methoxy-2-naphthol, 1,4-dimethoxynaphthalene,1,5-dimethoxynaphthalene, 1,6-dimethoxynaphthalene,1,7-dimethoxynaphthalene, 1,8-dimethoxynaphthalene,2,3-dimethoxynaphthalene, 2,6-dimethoxynaphthalene,2,7-dimethoxynaphthalene, methyl 3-hydroxy-naphthalene-2-carboxylate,naphthalene, 1-methylnaphthalene, 2-methylnaphthalene,1,2-dimethylnaphthalene, 1,3-dimethylnaphthalene,1,4-dimethylnaphthalene, 1,5-dimethylnaphthalene,1,6-dimethylnaphthalene, 1,7-dimethylnaphthalene,1,8-dimethylnaphthalene, 2,3-dimethylnaphthalene,2,6-dimethylnaphthalene, 2,7-dimethylnaphthalene, 1-ethylnaphthalene,2-ethylnaphthalene, 1-propylnaphthalene, 2-propylnaphthalene,1-butylnaphthalene, 2-butylnaphthalene, 1-phenylnaphthalene,1-cyclohexylnaphthalene, 1-cyclopentylnaphthalene, indene,hydroxyanthracene, acenaphthylene, acenaphthene, biphenyl, bisphenol,trisphenol, dicyclopentadiene, substituted or unsubstitutedphenolphthalein, phenol red, cresolphthalein, cresol red,thymolphthalein, 2-fluorophenol, 3-fluorophenol, 4-fluorophenol,4-trifluoromethylphenol, 2,3-difluorophenol, 2,4-difluorophenol,2,5-difluorophenol, 2,6-difluorophenol, 3,4-difluorophenol,3,5-difluorophenol, 2,3,4-trifluorophenol, 2,3,6-trifluorophenol,3,4,5-trifluorophenol, 2-trifluoromethoxyphenol,3-trifluoromethoxyphenol, 4-trifluoromethoxyphenol,2-trifluoromethylthiophenol, 3-trifluoromethylthiophenol,4-trifluoromethylthiophenol, 2,3-ditrifluorophenol,2,4-ditrifluorophenol, 2,5-ditrifluorophenol, 2,6-ditrifluorophenol,3,4-ditrifluorophenol, 3,5-ditrifluorophenol, pentafluorophenol,3-trifluoromethylphenol, 2-trifluoromethylphenol,4-(1,1,1,3,3,3-hexafluoro-2-propanol)phenol,3-(1,1,1,3,3,3-hexafluoro-2-propanol)phenol, and3,5-di(1,1,1,3,3,3-hexafluoro-2-propanol)phenol.

To synthesize the novolak resin having the repeating unit shown by theformula (1) or (2), optional monomers and aldehyde are added to theabove-described substituted or unsubstituted bisnaphthol derivative andpolymerized to form a novolak. Forming a novolak increases the molecularweight, thus enabling the inhibition of generation of outgas andparticles due to low molecular weight components at baking.

Examples of the aldehyde usable in synthesis of the novolak resinshaving the repeating unit shown by the formula (1) or (2) includeformaldehyde, trioxane, paraformaldehyde, benzaldehyde,methoxybenzaldehyde, phenylbenzaldehyde, tritylbenzaldehyde,cyclohexylbenzaldehyde, cyclopentylbenzaldehyde, tert-butylbenzaldehyde,naphthalenealdehyde, hydroxynaphthalenealdehyde, anthracenealdehyde,fluorenealdehyde, pyrenealdehyde, methoxynaphthalenealdehyde,dimethoxynaphthalenealdehyde, acetaldehyde, propylaldehyde,phenylacetaldehyde, naphthaleneacetaldehyde, substituted orunsubstituted carboxylnaphthaleneacetaldehyde, a-phenylpropylaldehyde,β-phenylpropylaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde,p-hydroxybenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde,p-chlorobenzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde,p-nitrobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde,p-methylbenzaldehyde, p-ethylbenzaldehyde, p-n-butylbenzaldehyde,furfural, furancarboxaldehyde, and thiophenealdehyde. Among them,formaldehyde is particularly preferable.

The aldehydes can be used alone or in combination of two or more kinds.The amount of the aldehyde to be used is preferably 0.2 to 5 mol, morepreferably 0.5 to 2 mol with respect to 1 mol of the substituted orunsubstituted bisnaphthol derivative.

A catalyst may be used in condensation reaction of the bisnaphtholderivative with the aldehyde. Illustrative examples thereof include acidcatalysts such as hydrochloric acid, nitric acid, sulfuric acid, formicacid, oxalic acid, acetic acid, methanesulfonic acid, camphor sulfonicacid, tosic acid, and trifluoromethane sulfonic acid. The amount of theacid catalyst to be used is preferably in the range of 1×10⁻⁵ to 5×10⁻¹mol with respect to 1 mol of the bisnaphthol derivative.

The novolak resins having the repeating unit shown by the formula (1) or(2) preferably have a weight average molecular weight in the range of400 to 20,000, more preferably 500 to 10,000, particularly preferably600 to 10,000. A resin having smaller molecular weight is excellent infilling property, but easy to generate outgas in baking. Thus, it ispreferable to optimize the molecular weight in view of filling propertyand generation of outgas.

To achieve both filling property and outgas reduction, the novolak resinhaving the repeating unit shown by the formula (2) is preferablecontained in amount of 0.1 to 50 parts by mass with respect to 1 part bymass of the novolak resin having the repeating unit shown by the formula(1). For the same purpose, the bisnaphthol derivative shown by theformula (3) is preferably contained in amount of 0 to 50 parts by masswith respect to 1 part by mass of the novolak resin having the repeatingunit shown by the formula (1).

Furthermore, the inventive resist under layer film compositionpreferably contains the novolak resin having the repeating unit shown bythe formula (2) and the bisnaphthol derivative shown by the formula (3)in a total amount of 5 to 100 parts by mass with respect to 1 part bymass of the novolak resin having the repeating unit shown by the formula(1). Such a ratio enables the reduction in outgas by a resin layer ofthe novolak resin having the repeating unit shown by the formula (1) andthe improvement in filling property by the bisnaphthol derivative shownby the formula (3) to be achieved with particularly good balance.

When the novolak resin having the repeating unit shown by the formula(1) or (2) is synthesized, the reaction solution may contain monomerssuch as a substituted or unsubstituted bisnaphthol derivative that isunpolymerized and low molecular weight components such as dimer andtrimer. Since a bisnaphthol derivative has larger molecular weight thana naphthol derivative, a bisnaphthol derivative is more difficult tobecome an outgas component than a naphthol derivative. However, largeamount of the unpolymerized monomers and the low molecular weightcomponents can cause outgas. Therefore, these components are preferablyremoved as much as possible to achieve both filling property and outgasreduction. In the case that monomer components are added to improvefilling property, it is preferable to add additional monomer componentsin desired amount after the unpolymerized monomers and the low molecularweight components are removed as mentioned above.

The inventive resist under layer film composition contains the novolakresin having the repeating unit shown by the formula (1) and either orboth of the novolak resin having the repeating unit shown by the formula(2) and the bisnaphthol derivative shown by the formula (3). In additionto these novolak resins, other resin may be blended to the composition.Examples of the blendable resin include novolak resins obtained byreaction of aldehyde with phenol, o-cresol, m-cresol, p-cresol,2,3-dimethylphenol, 2,5-dimethylphenol, 3,4-dimethylphenol,3,5-dimethylphenol, 2,4-dimethylphenol, 2,6-dimethylphenol,2,3,5-trimethylphenol, 3,4,5-trimethylphenol, 2-tert-butylphenol,3-tert-butylphenol, 4-tert-butylphenol, 2-phenylphenol, 3-phenylphenol,4-phenylphenol, 3,5-diphenylphenol, 2-naphthylphenol, 3-naphthylphenol,4-naphthylphenol, 4-tritylphenol, resorcinol, 2-methylresorcinol,4-methylresorcinol, 5-methylresorcinol, catechol, 4-tert-butylcatechol,2-methoxyphenol, 3-methoxyphenol, 2-propylphenol, 3-propylphenol,4-propylphenol, 2-isopropylphenol, 3-isopropylphenol, 4-isopropylphenol,2-methoxy-5-methylphenol, 2-tert-butyl-5-methylphenol, pyrogallol,thymol, isothymol, 1-naphthol, 2-naphthol, 2-methyl-1-naphthol,4-methoxy-1-naphthol, 7-methoxy-2-naphthol, dihydroxynaphthalene such as1,5-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, and2,6-dihydroxynaphthalene, phenolphthalein, phenol red, cresolphthalein,cresol red, thymolphthalein, methyl 3-hydroxynaphthalene-2-carboxylate,indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene,biphenyl, bisphenol, or trisphenol. Other examples include resinsobtained by co-condensation of a phenol compound with dicyclopentadiene,tetrahydroindene, 4-vinylcyclohexene, norbornadiene,5-vinylnorborna-2-ene, α-pinene, β-pinene, or limonene, withoutaldehyde.

Furthermore, as a monomer component other than the bisnaphtholderivative shown by the formula (3), a compound selected fromhydroxystyrene, alkoxystyrene, hydroxyvinylnaphthalene,alkoxyvinylnaphthalene, (meth)acrylate, vinylether, maleic anhydride,and itaconic anhydride may be added. A compound such as substituted orunsubstituted naphthol may also be added.

The inventive resist under layer film composition may further contain ahigh-carbon resin. Examples of the resin include resins used in a resistunder layer film composition disclosed in Japanese Patent Laid-OpenPublication No. 2004-205658, No. 2004-205676, No. 2004-205685, No.2004-271838, No. 2004-354554, No. 2005-010431, No. 2005-049810, No.2005-114921, No. 2005-128509, No. 2005-250434, No. 2006-053543, No.2006-227391, No. 2006-259249, No. 2006-259482, No. 2006-285095, No.2006-293207, No. 2006-293298, No. 2007-140461, No. 2007-171895, No.2007-199653, No. 2007-316282, No. 2008-026600, No. 2008-065303, No.2008-096684, No. 2008-257188, No. 2010-160189, No. 2010-134437, No.2010-170013, No. 2010-271654, No. 2008-116677, and No. 2008-145539.

The novolak resin having the repeating unit shown by the formula (1) inthe inventive under layer film composition preferably contains one ormore groups selected from the formulae (4)-1 to (4)-5 as R¹ and/or R² inthe formula (1),

wherein R represents a hydrogen atom or an alkyl group having 1 to 4carbon atoms; R° represents a hydrogen atom, a methyl group, an acetylgroup, or a trifluoroacetyl group; Rf represents a fluorine atom, alinear, branched, or cyclic alkyl group having 1 to 9 carbon atoms, analkenyl group having 2 to 8 carbon atoms, an aryl group having 6 to 10carbon, an aralkyl group having 7 to 10 carbon atoms, or an alkoxy grouphaving 1 to 10 carbon atoms, in which these groups contain at least onefluorine atom and may further contain a hydroxyl group or an alkoxygroup; R²² represents a hydrogen atom, a methyl group, or an ethylgroup; and R²³ and R²⁴ represent a hydrogen atom or a linear or branchedalkyl group having 1 to 5 carbon atoms.

When such groups are contained, the amount of outgas generated from theresist under layer film composition can be further reduced.

Illustrative examples of the groups shown by the formulae (4)-1 to (4)-5include the following groups.

In the novolak resin having the repeating unit shown by the formula (1),preferably 10% or more, more preferably 20% or more, particularlypreferably 30% or more of the total of R¹ and R² in the formula (1) aregroups shown by the formula (4)-1 to (4)-5. The novolak resin having therepeating unit shown by the formula (1) may contain variousfluorine-containing groups shown by the formula (4)-1 to (4)-5.

Examples of the method for synthesizing the novolak resin having therepeating unit shown by the formula (1) include a method in which amonomer of the bisnaphthol derivative wherein R¹ and/or R² is afluorine-containing group reacts with an aldehyde to form a novolakresin; a method in which a monomer of the bisnaphthol derivative whereinR¹ and/or R² is a hydrogen atom reacts with an aldehyde to form anovolak resin, and a fluorine-containing group is added to the obtainednovolak resin; and a method in which a hydrogen atom of a hydroxyl groupin a novolak resin is substituted with a fluorine-containing group.

Examples of the method for adding a fluorine-containing group to anovolak resin include an addition reaction of a fluorine-containingcompound having a carbon-carbon double bond with a hydroxyl group of anovolak resin. Examples of the method for substituting a hydrogen atomof a hydroxyl group in a novolak resin with a fluorine-containing groupinclude a method which uses an epoxy compound, an acid anhydride, anacid chloride or the like containing one or more fluorine atoms forsubstitution.

(Organic Solvent)

The inventive resist under layer film composition may further contain anorganic solvent. The organic solvent usable in the inventive resistunder layer film composition is not limited so long as it can dissolve abase resin of the above-described novolak resin or other resin, monomercomponents, and additives such as an acid generator and a crosslinkingagent described later. Specifically, solvents disclosed in paragraphs(0091) and (0092) of Japanese Patent Laid-Open Publication No.2007-199653 may be added.

(Crosslinking Agent)

The resist under layer film requires characteristics that when asilicon-containing middle layer film composition or a resist upper layerfilm composition is dispensed to the resist under layer film, the resistunder layer film does not dissolve in the silicon-containing middlelayer film composition or the resist upper layer film composition anddoes not mix with the silicon-containing middle layer film or the resistupper layer film. Therefore, a crosslinking agent is preferably added tothe inventive resist under layer film composition to promotecrosslinking by baking after the application.

Examples of the crosslinking agent usable in the present inventioninclude a melamine compound, a guanamine compound, a glycolurilcompound, a urea compound, an epoxy compound, an isocyanate compound, oran azide compound that is substituted with at least one group selectedfrom a methylol group, an alkoxymethyl group, and acyloxymethyl group;and a compound having a double bond such as an alkenyl ether group.These compounds may be used as an additive, or may be introduced as apendant group into a side chain of the polymer. A compound containing ahydroxyl group may also be used as the crosslinking agent.

Illustrative examples of the crosslinking agent include epoxy compoundssuch as tris(2,3-epoxypropyl)isocyanurate, trimethylolmethanetriglycidyl ether, trimethylolpropane triglycidyl ether, andtriethylolethane triglycidyl ether; melamine compounds such ashexamethylol melamine, hexamethoxymethyl melamine, a hexamethylolmelamine compound in which 1 to 6 methylol groups are methoxymethylated,a mixture thereof, hexamethoxyethyl melamine, hexaacyloxymethylmelamine, and a hexamethylol melamine compound in which 1 to 6 methylolgroups are acyloxymethylated, and a mixture thereof; guanamine compoundssuch as tetramethylol guanamine, tetramethoxymethyl guanamine, atetramethylol guanamine compound in which 1 to 4 methylol groups aremethoxymethylated, a mixture thereof, tetramethoxyethyl guanamine,tetraacyloxy guanamine, a tetramethylol guanamine compound in which 1 to4 methylol groups are acyloxymethylated, and a mixture thereof;glycoluril compounds such as tetramethylol glycoluril, tetramethoxyglycoluril, tetramethoxymethyl glycoluril, a tetramethylol glycolurilcompound in which 1 to 4 methylol groups are methoxymethylated, amixture thereof, a tetramethylol glycoluril compound in which 1 to 4methylol groups are acyloxymethylated, and a mixture thereof; ureacompounds such as tetramethylol urea, tetramethoxymethyl urea, atetramethylol urea compound in which 1 to 4 methylol groups aremethoxymethylated, a mixture thereof, and tetramethoxyethyl urea;isocyanate compounds such as tolylene diisocyanate, diphenylmethanediisocyanate, hexamethylene diisocyanate, and cyclohexane diisocyanate;and azide compounds such as 1,1′-biphenyl-4,4′-bisazide,4,4′-methylidene bisazide, and 4,4′-oxybisazide.

As the crosslinking agent for forming crosslinking by an acetal group,there may be mentioned a compound having multiple enolether groupswithin the molecule. Examples of the crosslinking agent having at leasttwo enolether groups within the molecule include ethylene glycol divinylether, triethylene glycol divinyl ether, 1,2-propanediol divinyl ether,1,4-butanediol divinyl ether, tetramethylene glycol divinyl ether,neopentyl glycol divinyl ether, trimethylolpropane trivinyl ether,hexanediol divinyl ether, 1,4-cyclohexanediol divinyl ether,pentaerythritol trivinyl ether, pentaerythritol tetravinyl ether,sorbitol tetravinyl ether, sorbitol pentavinyl ether, ethylene glycoldipropenyl ether, triethylene glycol dipropenyl ether, 1,2-propanedioldipropenyl ether, 1,4-buthanedisol dipropenyl ether, tetramethyleneglycol dipropenyl ether, neopentyl glycol dipropenyl ether, trimethylolpropane tripropenyl ether, hexanediol dipropenyl ether,1,4-cyclohexanediol dipropenyl ether, pentaerythritol tripropenyl ether,pentaerythritol tetrapropenyl ether, sorbitol tetrapropenyl ether, andsorbitol pentapropenyl ether.

In addition, following compounds may be mentioned as the crosslinkingagent of the compound having multiple enolether groups within themolecule.

An enolether group is linked with an hydroxyl group through an acetalbond by heat. Thus, addition of the compound having multiple enolethergroups within the molecule promotes thermal crosslinking by acetalgroups.

In addition, a crosslinking agent containing an acid-labile tertiaryester group having two or more oxirane within the molecule may also beadded. Illustrative examples of the crosslinking agent include compoundsdisclosed in Japanese Patent Laid-Open Publication No. 2006-096848. Whensuch a crosslinking agent is used, the oxirane is crosslinked by heatand the tertiary ester portion is decomposed by acid, as described inJapanese Patent Laid-Open Publication No. 2001-226430.

The inventive resist under layer film composition can be crosslinked byheating at 300° C. or higher after spin coating even without containinga crosslinking agent as mentioned above. In this case, polymers arelinked by oxidative coupling reaction.

(Acid Generator)

In addition, an acid generator may be added to the inventive resistunder layer film composition to further promote crosslinking reaction byheat. The acid generator includes one capable of generating an acid bythermal decomposition and one capable of generating an acid by lightirradiation, and any acid generator can be added. Specifically,materials disclosed in paragraphs (0061) to (0085) of Japanese PatentLaid-Open Publication No. 2007-199653 may be mentioned.

When the inventive resist under layer film composition as describedabove is used, a resin layer of the novolak resin having the repeatingunit shown by the formula (1) with fluorine atoms in a prescribed amountor more is formed on the resist under layer film surface. Thisfluorine-containing layer inhibits generation of outgas even when theresist under layer film composition is baked at high temperature.Moreover, by adding the monomer component shown by the formula (3) tothe resist under layer film composition, the property of filling gaps ofa substrate can be improved while inhibiting generation of outgas.

<Patterning Process>

Furthermore, the present invention provides a patterning process forforming a pattern in a substrate by lithography, comprising: forming aresist under layer film on a substrate to be processed by using theabove-described resist under layer film composition; forming asilicon-containing middle layer film on the resist under layer film byusing a silicon-containing middle layer film composition; forming aresist upper layer film on the silicon-containing middle layer film byusing a resist upper layer film composition; forming a resist pattern inthe resist upper layer film by exposure of a pattern circuit region ofthe resist upper layer film and development; transferring the pattern tothe silicon-containing middle layer film by etching using the resistupper layer film having the formed resist pattern as a mask;transferring the pattern to the resist under layer film by etching usingthe silicon-containing resist middle layer film having the transferredpattern as a mask; forming the pattern in the substrate to be processedby etching using the resist under layer film having the transferredpattern as a mask.

Hereinafter, examples of the inventive patterning process will bedescribed with reference to drawings, but the present invention is notlimited thereto.

FIG. 1A to 1F show an example of the inventive patterning process by3-layer process using a silicon-containing middle layer film. In thepatterning process shown in FIG. 1A to 1F, first, (A) the inventiveresist under layer film composition is applied onto a layer to beprocessed 2 on a substrate 1 to form a resist under layer film 3, asilicon-containing middle layer film composition is applied onto theresist under layer film 3 to form a silicon-containing middle layer film4, and a resist upper layer film composition is applied onto thesilicon-containing middle layer film 4 to form a resist upper layer film5. Then, (B) a pattern circuit region 6 of the resist upper layer film 5is exposed to light, and (C) development is performed to form a resistpattern in the resist upper layer film 5 (in the case of positiveresist). (D) The pattern is transferred to the silicon-containing middlelayer film 4 by etching using the resist upper layer film 5 having theformed resist pattern as a mask. (E) The pattern is transferred to theresist under layer film 3 by etching using the silicon-containing middlelayer film 4 having the transferred pattern as a mask. (F) The patternis formed in the layer to be processed 2 by etching using the resistunder layer film 3 having the transferred pattern as a mask.

[Substrate to be Processed]

The substrate to be processed may be, but is not limited to, a substrateon which a layer to be processed is formed. The substrate is notlimited, and a material such as Si, α-Si, p-Si, SiO₂, SiN, SiON, W, TiN,and Al, and a different material from the layer to be processed ispreferably used. The layer to be processed is preferably made of Si,SiO₂, SiON, SiN, p-Si, α-Si, W, W—Si, Al, Cu, Al—Si, or the like; andvarious low dielectric constant (low-k) films, etching stopper filmsthereof, and a substrate with gaps for Fin-FET are preferably used. Thelayer to be processed is preferably formed with a thickness of 10 to10,000 nm, particularly 20 to 5,000 nm.

A hard mask for processing the substrate may be formed between thesubstrate to be processed and the resist under layer film. When thesubstrate to be processed is a SiO₂ insulator film substrate, SiN, SiON,p-Si, α-Si, W, W—Si, amorphous carbon or the like is used as the hardmask. When the substrate to be processed is a gate electrode such asp-Si, W—Si, and Al—Si, SiO₂, SiN, SiON or the like is used.

On the resist under layer film formed from the inventive resist underlayer film composition, a resist upper layer film may be formed.Alternatively, a tri-layer process in which a middle layer filmcontaining an element selected from silicon, titanium, zirconium, andhafnium is formed between a resist upper layer film and the resist underlayer film is also preferably used. The most preferable elementcontained in the middle layer film for the tri-layer is silicon.

[Silicon-Containing Middle Layer Film]

The silicon-containing middle layer film composition may include, thoughnot limited to, a silsesquioxane-based material having absorption at theexposure wavelength as disclosed in Japanese Patent Laid-OpenPublication No. 2007-302873. The silicon-containing middle layer filmmay be formed by spin coating. After spin coating, thesilicon-containing middle layer film composition is baked at 150 to 300°C. to form a silicon-containing middle layer film composed of a siliconoxide film.

The best optical constants (n- and k-values) of the silicon-containingmiddle layer film to be used in the tri-layer process for antireflectioneffect is as follows: the n-value is 1.5 to 1.9; the k-value is 0.15 to0.3; the film thickness is 20 to 130 nm. Moreover, the best resist underlayer film has a n-value of 1.3 to 1.8, a k-value of 0.2 to 0.8, and afilm thickness of 50 nm or more.

[Resist Upper Layer Film]

The resist upper layer film composition may contain, though not limitedto, a known base polymer mainly consisting of hydrocarbon, as disclosedin Japanese Patent Laid-Open Publication No. H09-073173 and No.2000-336121. The thickness of the resist upper layer film is preferably,but not limited to, 20 to 500 nm, particularly 30 to 400 nm.

The spin coating method is suitable to form the resist upper layer filmfrom the resist upper layer film composition, as in the case that theresist under layer film is formed. After the resist upper layer film isformed by spin coating or other method, pre-baking is performedpreferably at 80 to 180° C. for 10 to 300 seconds.

When an inorganic hard mask intermediate film is formed instead of thesilicon-containing middle layer film, an inorganic hard maskintermediate film selected from a silicon oxide film, a silicon nitridefilm, a silicon oxynitride film, a silicon carbide film, a polysiliconfilm, a titanium nitride film, a titanium oxide film, a titanium carbidefilm, a zirconium oxide film, and a hafnium oxide film may be formedbetween the resist under layer film and the resist upper layer film.

[Inorganic Hard Mask Intermediate Film]

The inorganic hard mask intermediate film composition is not limited. Aninorganic hard mask intermediate film containing an element selectedfrom metals such as silicon, titanium, zirconium, and hafnium may beused. In particular, as to the titanium-containing intermediate film,materials disclosed in Japanese Patent Laid-Open Publication No.2014-178602 may be used. The tri-layer process can be done by forming aninorganic hard mask intermediate film on a resist under layer film andforming a resist upper layer film thereon. In particular, p-Si, SiN,SiON, SiC, TiN, TiO₂, TiC, ZrO₂, and HfO₂ are preferable as theinorganic hard mask intermediate film material. The inorganic hard maskintermediate film can be formed by, for example, the CVD method, the ALDmethod, or the sputtering method.

In the case of a 4-layer resist film in which an organic antireflectionfilm is formed on the inorganic hard mask intermediate film, an organicantireflection film composition may be applied onto the inorganic hardmask intermediate film to form an organic antireflection film. This caseis called 4-layer process.

[Organic Antireflection Film]

The organic antireflection film composition is not limited, and anyknown material can be used.

In the case of a 5-layer resist film in which a hydrocarbon film isformed and an silicon-containing middle layer film is then formedthereon, a hydrocarbon film is formed on the inorganic hard maskintermediate film from a hydrocarbon film composition by spin coating,and a silicon-containing middle layer film is formed thereon from asilicon-containing middle layer film composition. This case is called5-layer process.

The hydrocarbon film composition is not limited, and any known materialscan be used.

[Pattern Formation] (3-Layer Process)

A method for forming a resist under layer film by using the inventiveresist under layer film composition will now be described. The film canbe formed on a substrate by spin coating or other method, in the samemanner as in the conventional method for forming a photoresist film. Theresist under layer film composition is applied onto the above-describedsubstrate to be processed by spin coating or other method to form aresist under layer film. Then, baking is preferably performed toevaporate the organic solvent, prevent mixing with a resist upper layerfilm, or promote crosslinking reaction. The baking temperature ispreferably at 80 to 1,000° C. for 10 to 300 seconds. The thickness ofthe resist under layer film is appropriately determined, and it ispreferred to set 5 to 100,000 nm, particularly 10 to 50,000 nm. Theabove range of thickness provides high antireflection effect.

The most common baking method is performed on a hot plate. The bakingmay also be performed by irradiating with infrared rays. A hot plate maybe used for baking at a high temperature of 400° C. or higher, while afurnace which can heat several hundred wafers in a batch manner has anadvantage of throughput.

In the case of the 3-layer process, as shown in FIG. 1A, a resist underlayer film 3 is formed on a layer to be processed 2 laminated on asubstrate 1, a silicon-containing middle layer film 4 is formed thereon,and a resist upper layer film 5 is formed thereon.

In addition, a resist top coat may be formed on the resist upper layerfilm. The resist top coat is often formed for the purpose of preventingelution of additives such as an acid generator from the resist upperlayer film and improving water-sliding property in the liquid immersionexposure. The resist top coat may have antireflection function. Theresist top coat can be classified into water-soluble one andwater-insoluble one. The water-insoluble resist top coat is furtherclassified into a material that is soluble in an alkali developer and amaterial that is insoluble in an alkali developer and removable with anorganic solvent. The former is preferable because of process advantagethat the top coat can be removed at the time of development of theresist. In the case of forming a negative pattern by organic solventdevelopment, the latter solvent-removable top coat can be removed at thetime of development. When the top coat is soluble in an alkalideveloper, a solution in which a polymer havinga-trifluoromethylhydroxyl group is dissolved in a higher alcohol having4 or more carbon atoms or an ether compound having 8 to 12 carbon atomsis used.

As to the method for forming the resist top coat, a top coat compositionis applied onto the resist upper layer film by spin coating afterprebaking. The film thickness of the resist top coat is preferably 10 to200 nm. After drying or liquid immersion exposure, post exposure baking(PEB) is performed, followed by development with an alkali developer for10 to 300 seconds. Usually, a 2.38 mass % tetramethylammonium hydroxideaqueous solution is widely used as the alkali developer. When a resisttop coat soluble in the developer is used, removal of the resist topcoat and development of the resist upper layer film can be performed atthe same time.

A resist pattern of the resist upper layer film can be formed accordingto the conventional method. A resist pattern can be obtained by exposureof a pattern circuit region of the resist upper layer film, PEB, anddevelopment. When a silicon-containing middle layer film which containsa polymer having silicon-containing acid-labile pendants and an acidgenerator is used, the resist pattern and a pattern of thesilicon-containing middle layer film can be obtained at the same time byexposure and development.

Here, if water remains on the resist upper layer film before PEB, thewater absorbs acid in the resist upper layer film during PEB, impedingpattern formation. To fully remove water on the resist top coat beforePEB, water on the film is preferably dried or recovered by suitablemeans, for example, spin drying prior to PEB, purging of the filmsurface with dry air or nitrogen, or optimizing the water recoverynozzle configuration or process on a stage after the exposure.

First, a pattern circuit region 6 of the resist upper layer film 5 isexposed (FIG. 1B), and PEB and development are carried out to form aresist pattern in the resist upper layer film 5 (FIG. 1C). By using theobtained resist patter as a mask, the silicon-containing middle layerfilm 4 is etched with CF-based gas to transfer the pattern to thesilicon-containing middle layer film 4 (FIG. 1D).

The development is carried out by, for example, the puddle method or thedip method with an alkali aqueous solution. In particular, the puddlemethod with a 2.38 mass % tetramethylammonium hydroxide aqueous solutionis preferable. The film is treated with an developer at room temperaturefor 10 seconds to 300 seconds, then rinsed with pure water and dried byspin drying, nitrogen blowing or other method. The exposed part isdissolved by alkali development in the case of positive resist, orinsolubilized in the case of negative resist.

A negative pattern can also be formed by organic solvent development.The solvent to be used in this development is one or more solventsselected from 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone,4-heptanone, 2-hexanone, 3-hexanone, diisobutylketone,methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate,butyl acetate, isobutyl acetate, amyl acetate, butenyl acetate, isoamylacetate, propyl formate, butyl formate, isobutyl formate, amyl formate,isoamyl formate, methyl valerate, methyl pentenoate, methyl crotonate,ethyl crotonate, methyl propionate, ethyl propionate, ethyl3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyllactate, isobutyl lactate, amyl lactate, isoamyl lactate, methyl2-hydroxy-isobutyrate, ethyl 2-hydroxy-isobutyrate, methyl benzoate,ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate,benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzylpropionate, ethyl phenylacetate, and 2-phenylethyl acetate.

Then, the pattern is transferred to the resist under layer film 3 by dryetching with oxygen plasma or the like (FIG. 1E) using the resistpattern and the pattern of the silicon-containing middle layer film as amask. The resist under layer film formed from the inventive resist underlayer film composition is preferably dry etched with an etching gascontaining an oxygen gas or a hydrogen gas. In addition to the oxygengas or hydrogen gas, an inert gas such as He and Ar or a gas such as CO,CO₂, NH₃, SO₂, N₂, and NO₂ may be added.

Moreover, it is preferred that the resist upper layer film compositiondo not contain a polymer having a silicon atom, and the etching of theresist under layer film be performed with an etching gas containing anoxygen gas or a hydrogen gas. Use of such an etching gas enables theremoval of the resist upper layer film and the etching of the resistunder layer film to be performed at the same time.

Once the pattern of the silicon-containing middle layer film is removed,the layer to be processed 2 is etched by using the pattern of the resistunder layer film as a mask to form the pattern (FIG. 1F). Here, when thelayer to be processed 2 is made of SiO₂ or SiN, an etching gascontaining fluorocarbon-based gas is preferable, and when the layer ismade of polysilicon (p-Si), Al, or W, an etching gas containingchlorine-based gas or bromine-based gas is preferable. If ions areimplanted, the substrate to be processed does not necessarily need to beprocessed, and the ions are implanted by using the pattern of the resistunder layer film as a mask. Before or after ion implantation, thesilicon-containing middle layer film and the resist under layer film areremoved. This removal may be performed by dry stripping with CF gas orO₂ gas or wet stripping with water containing sulfuric acid and hydrogenperoxide or water containing ammonia and hydrogen peroxide.

When an inorganic hard mask intermediate film is formed instead of thesilicon-containing middle layer film, etching of the inorganic hard maskintermediate film may be carried out according to the conventionalmethod.

In the case of 4-layer process, etching of the organic antireflectionfilm may be carried out according to the conventional method. Theetching of the organic antireflection film and the inorganic hard maskintermediate film may be carried out successively, or after the organicantireflection film is etched alone, an etching apparatus may be changedto etch the inorganic hard mask intermediate film.

In the case of 5-layer process, etching of the hydrocarbon film may becarried out according to the conventional method.

As mentioned above, the inventive patterning process using the inventiveresist under layer film composition allows a substrate to besufficiently embedded, prevents generation of outgas, and thussignificantly reduces defects at fine processing in the manufacturingprocess of a semiconductor apparatus and the like. Accordingly, theresist under layer film composition and the patterning process of thepresent invention are especially suitable for manufacturing athree-dimension device such as Fin-FET, which requires filling a trenchpattern having narrow pitch and inhibiting generation of outgas duringbaking of the resist under layer film that may cause defects.

EXAMPLES

Hereinafter, the present invention will be specifically explained withreference to examples and comparative examples, but the presentinvention is not limited thereto.

<Synthesis of Novolak Resin Having Repeating Unit Shown by Formula (2)>Synthesis Example 1-1

45 g of 6,6′-(9H-fluoren-9,9-diyl)di(2-naphthol), 120 g of a 37 mass %formalin aqueous solution, 5 g of oxalic acid, and 50 g of dioxane weremixed and stirred at 100° C. for 24 hours. After reaction, the reactionproduct was dissolved in 500 mL of methylisobutyl ketone, and thecatalyst and metal impurities were removed by sufficiently washing withwater. Then, the pressure was reduced to 2 mmHg at 150° C., and moistureand the solvent were thus removed under reduced pressure to obtainNovolak resin 2-1 shown below.

Novolak Resin 2-1

Molecular weight (Mw)=3,100

Dispersity (Mw/Mn)=3.88

Synthesis Example 1-2

45 g of a-naphtholphthalein, 120 g of a 37 mass % formalin aqueoussolution, 5 g of oxalic acid, and 50 g of dioxane were mixed, andNovolak resin 2-2 shown below was obtained in the same manner as inSynthesis example 1-1.

Novolak Resin 2-2

Molecular weight (Mw)=2,100

Dispersity (Mw/Mn)=3.67

Synthesis Example 1-3

45 g of naphthofluorescein, 120 g of a 37 mass % formalin aqueoussolution, 5 g of oxalic acid, and 50 g of dioxane were mixed, andNovolak resin 2-3 shown below was obtained in the same manner as inSynthesis example 1-1.

Novolak Resin 2-3

Molecular weight (Mw)=2,600

Dispersity (Mw/Mn)=3.55

Synthesis Example 1-4

45 g of 6,6′-(9H-fluoren-9,9-diyl)di(2-naphthol), 60 g of a 37 mass %formalin aqueous solution, 5 g of oxalic acid, and 50 g of dioxane weremixed and stirred at 80° C. for 24 hours. After reaction, the reactionproduct was dissolved in 500 mL of methylisobutyl ketone, and thecatalyst and metal impurities were removed by sufficiently washing withwater. Then, the pressure was reduced to 2 mmHg at 150° C., and moistureand the solvent were thus removed under reduced pressure to obtainNovolak resin 2-4 shown below.

Novolak Resin 2-4

Molecular weight (Mw)=1,100

Dispersity (Mw/Mn)=3.86

<Synthesis of Novolak Resin Having Repeating Unit Shown by Formula (1)>Synthesis Example 2-1

A mixture of 4.6 g of Novolak resin 2-1, 2.2 g of4,5-epoxy-1,1,1-trifluoropentane, 40 g of 1-methoxy-2-propanol, 0.2 g ofwater containing 25 mass % caustic soda was stirred at room temperaturefor 24 hours. The mixture was diluted with ethyl acetate and washed withdilute nitric acid and ultrapure water, and the solvent was distilledoff under reduced pressure to obtain 6.8 g of Novolak resin 1-1 shownbelow. The obtained Novolak resin 1-1 was analyzed by ¹³C,¹H-nuclearmagnetic resonance (NMR) and gel permeation chromatography (GPC), givingthe following result.

Novolak Resin 1-1

Molecular weight (Mw)=4,000

Dispersity (Mw/Mn)=3.95

Synthesis Example 2-2

A mixture of 4.6 g of Novolak resin 2-1, 4.3 g of3,3,3-trifluoropropionic anhydride, 30 g of ethyl acetate, 0.2 g ofmethanesulfonic acid was stirred at 70° C. for 24 hours. After cooling,the mixture was washed with dilute ammonia water and ultrapure water,and the solvent was distilled off under reduced pressure to obtain 6.6 gof Novolak resin 1-2 shown below. The obtained Novolak resin 1-2 wasanalyzed as above, giving the following result.

Novolak Resin 1-2

Molecular weight (Mw)=3,600

Dispersity (Mw/Mn)=3.90

Synthesis Example 2-3

A mixture of 4.6 g of Novolak resin 2-1, 5.0 g oftrifluoromethanesulfinic anhydride, 40 g of N,N-dimethylformamide, and3.0 g of triethylamine was stirred at 70° C. for 24 hours. Aftercooling, the mixture was diluted with ethyl acetate and washed withultrapure water, and the solvent was distilled off under reducedpressure to obtain 6.9 g of Novolak resin 1-3 shown below. The obtainedNovolak resin 1-3 was analyzed as above, giving the following result.

Novolak Resin 1-3

Molecular weight (Mw)=3,400

Dispersity (Mw/Mn)=3.89

Synthesis Example 2-4

10.2 g of Novolak resin 1-4 shown below was obtained from a mixture of4.6 g of Novolak resin 2-1, 6.4 g of nonafluorobutanesulfonic acidchloride, 40 g of N,N-dimethylformamide, and 3.0 g of triethylamine inthe same manner as in Synthesis example 2-1. The obtained Novolak resin1-4 was analyzed as above, giving the following result.

Novolak Resin 1-4

Molecular weight (Mw)=4,200

Dispersity (Mw/Mn)=4.25

Synthesis Example 2-5

4.0 g of Novolak resin 2-1 was dissolved in 40 mL of tetrahydrofuran,followed by adding 0.01 g of methanesulfonic acid and 1.7 g of2,2,2-trifluoroethylvinyl ether to react the mixture at room temperaturefor 1 hour. Then, 0.25 g of 30 mass % ammonia water was added to quenchthe reaction. The obtained reaction solution was poured into 1 L ofacetic acid water for crystallization and precipitation. A white solidobtained by washing twice with water and filtration was dried underreduced pressure at 40° C. to obtain a white polymer shown below. Theobtained polymer named Novolak resin 1-5 was analyzed as above, givingthe following result.

Novolak Resin 1-5

Molecular weight (Mw)=3,800

Dispersity (Mw/Mn)=4.00

Examples 1-1 to 1-10, Comparative Examples 1-1 and 1-2 [Preparation ofResist Under Layer Film Composition]

Novolak resins 1-1 to 1-5, Novolak resins 2-1 to 2-4, and Monomers 1 to6 shown below were dissolved in an organic solvent containing 0.1 mass %of FC-4430 (available from Sumitomo 3M Ltd.) with the proportion shownin Table 1. The solution was filtered through a 0.1-μm filter made of afluorine resin to prepare resist under layer film compositions (Underlayer film compositions 1 to 10, Comparative under layer filmcompositions 1 and 2).

Monomers 1 to 6

(Refractive Index Measurement)

The resist under layer film compositions (Under layer film compositions1 to 10, Comparative under layer film compositions 1 and 2) thusprepared were each applied onto a silicon (Si) substrate, and baked at350° C. for 60 seconds to form a resist under layer film with athickness of 100 nm. After formation of the resist under layer film,refractive index (n, k) at 193 nm wavelength was measured by aspectroscopic ellipsometer with a variable incident light angle (VASE)manufactured by J. A. Woollam Co., Inc. The result is given in Table 1.

TABLE 1 Organic Resist under Polymer 1 Polymer 2 Additive solvent layerfilm (parts by (parts by (parts by (parts by n- k- composition mass)mass) mass) mass) value value Under layer Novolak resin Novolak resinMonomer 1 PGMEA 1.38 0.46 film 1-1 (7) 2-1 (43) (50) (2500) composition1 Under layer Novolak resin Novolak resin Monomer 1 PGMEA 1.40 0.45 film1-2 (7) 2-1 (43) (50) (2500) composition 2 Under layer Novolak resinNovolak resin Monomer 1 PGMEA 1.41 0.46 film 1-3 (7) 2-1 (43) (50)(2500) composition 3 Under layer Novolak resin Novolak resin Monomer 1PGMEA 1.37 0.45 film 1-4 (7) 2-1 (43) (50) (2500) composition 4 Underlayer Novolak resin Novolak resin Monomer 2 PGMEA 1.44 0.43 film 1-5(15) 2-2 (25) (60) (2500) composition 5 Under layer Novolak resinNovolak resin Monomer 3 PGMEA 1.44 0.42 film 1-1 (20) 2-3 (20) (60)(2500) composition 6 Under layer Novolak resin Novolak resin — PGMEA1.40 0.45 film 1-1 (15) 2-4 (85) (2500) composition 7 Under layerNovolak resin — Monomer 4 PGMEA 1.38 0.46 film 1-1 (20) (80) (2500)composition 8 Under layer Novolak resin — Monomer 5 PGMEA 1.40 0.45 film1-2 (7) (80) (2500) composition 9 Under layer Novolak resin — Monomer 6PGMEA 1.41 0.45 film 1-2 (7) (30) (2500) composition Monomer 1 10 (50)Comparative — Novolak resin Monomer 1 PGMEA 1.40 0.48 under layer 2-1(50) (50) (4000) film composition 1 Comparative — Novolak resin — PGMEA1.39 0.49 under layer 2-1 (100) (4000) film composition 2 PGMEA:propylene glycol monomethyl ether acetate

(Sublimate Measurement)

The prepared resist under layer film compositions (Under layer filmcompositions 1 to 10, Comparative under layer film compositions 1 and 2)were each applied onto a Si substrate, and baked under conditions shownin Table 2. The number of particles with a size of 0.3 μm or 0.5 μmgenerated in a hot plate oven under baking was measured with a particlecounter KR-11A, manufactured by RION Co., Ltd. The result is given inTable 2.

TABLE 2 Resist under Baking 0.3-μm 0.5-μm layer film temperatureparticles particles composition (° C.) (number) (number) Example 1-1Under layer film 350 15 2 composition 1 Example 1-2 Under layer film 35012 1 composition 2 Example 1-3 Under layer film 350 16 1 composition 3Example 1-4 Under layer film 320 6 0 composition 4 Example 1-5 Underlayer film 320 13 2 composition 5 Example 1-6 Under layer film 360 11 2composition 6 Example 1-7 Under layer film 400 5 1 composition 7 Example1-8 Under layer film 350 19 6 composition 8 Example 1-9 Under layer film350 21 5 composition 9 Example 1-10 Under layer film 350 24 7composition 10 Comparative Comparative 350 102 29 example 1-1 underlayer film composition 1 Comparative Comparative 350 25 8 example 1-2under layer film composition 2

The result shows that Under layer film compositions 1 to 10 andComparative under layer film composition 2 caused less particles atbaking than Comparative under layer film composition 1. Thus, it wasrevealed that these compositions reduced generation of outgas and hardlycontaminated an oven for baking. Moreover, it was also revealed that allunder layer film compositions had adequate heat resistance.

(Evaluation of Filling Property on Substrate Having Gaps) Examples 2-1to 2-10, Comparative Examples 2-1 and 2-2

A Si substrate on which a SiO₂ film with a thickness of 500 nm having adense hole pattern with a size of 160 nm and a pitch of 320 nm has beenformed was used as a substrate having gaps. The prepared resist underlayer film compositions (Under layer film compositions 1 to 10,Comparative under layer film compositions 1 and 2) were each appliedonto the SiO₂ film of the substrate having gaps under a condition wherea film 95 nm thick can be formed on a flat Si substrate. Then, the waferwas cut to observe whether the bottoms of the holes were filled with theresist under layer film composition by a scanning electron microscope(SEM). The result is given in Table 3.

TABLE 3 Baking Resist under layer temperature Filling state of hole filmcomposition (° C.) pattern Example 2-1 Under layer film 350 Under layerfilm filled composition 1 the bottoms of holes, and no void occurredExample 2-2 Under layer film 350 Under layer film filled composition 2the bottoms of holes, and no void occurred Example 2-3 Under layer film350 Under layer film filled composition 3 the bottoms of holes, and novoid occurred Example 2-4 Under layer film 320 Under layer film filledcomposition 4 the bottoms of holes, and no void occurred Example 2-5Under layer film 320 Under layer film filled composition 5 the bottomsof holes, and no void occurred Example 2-6 Under layer film 360 Underlayer film filled composition 6 the bottoms of holes, and no voidoccurred Example 2-7 Under layer film 400 Under layer film filledcomposition 7 the bottoms of holes, and no void occurred Example 2-8Under layer film 360 Under layer film filled composition 8 the bottomsof holes, and no void occurred Example 2-9 Under layer film 360 Underlayer film filled composition 9 the bottoms of holes, and no voidoccurred Example 2-10 Under layer film 360 Under layer film filledcomposition 10 the bottoms of holes, and no void occurred ComparativeComparative 350 Under layer film filled example 2-1 under layer film thebottoms of holes, composition 1 and no void occurred ComparativeComparative 350 Voids occurred in the example 2-2 under layer filmbottoms of holes composition 2

The result of Table 3 shows that Under layer film compositions 1 to 10had good filling property even in a substrate having gaps with highaspect ratio, and the combination with Table 2 indicates that thesecompositions inhibited generation of outgas. By contrast, Comparativeunder layer film compositions 1 and 2 could not accomplish both theachievement of filling property and the reduction in outgas.

Examples 3-1 to 3-10, Comparative Examples 3-1 and 3-2 [Preparation ofSilicon-Containing Middle Layer Film Composition]

A silicon-containing polymer and an acid generator PAG1 shown below weredissolved in an organic solvent containing 0.1 mass % FC-4430 (availablefrom Sumitomo 3M Ltd.) with the proportion shown in Table 4. Thesolution was filtered through a 0.1-μm filter made of a fluorine resinto prepare a silicon-containing middle layer film composition. Theprepared silicon-containing middle layer film composition was appliedonto a Si substrate, and baked at 200° C. for 60 seconds to form asilicon-containing middle layer film with a thickness of 40 nm. Afterformation of the silicon-containing middle layer film, refractive index(n, k) at 193 nm wavelength was measured by a spectroscopic ellipsometerwith a variable incident light angle (VASE) manufactured by J. A.Woollam Co., Inc. The result is given in Table 4.

TABLE 4 Acid Organic Polymer generator solvent (parts by (parts by(parts by Water (parts by n- k- mass) mass) mass) mass) value valueSilicon- Silicon- PAG1 (2.0) PGEE Water 1.62 0.21 containing containing(4000) (60) middle layer polymer (100) film composition PGEE: propyleneglycol ethyl ether

[Preparation of Resist Upper Layer Film Composition]

A resist polymer, an acid generator PAG2, and a quencher shown belowwere dissolved in an organic solvent containing 0.1 mass % FC-4430(available from Sumitomo 3M Ltd.) with the proportion shown in Table 5.The solution was filtered through a 0.1-μm filter made of a fluorineresin to prepare a resist upper layer film composition (ArF Resist filmcomposition).

TABLE 5 Organic Resist upper Quencher solvent layer film Polymer Acidgenerator (parts by (parts by composition (parts by mass) (parts bymass) mass) mass) ArF resist film Resist polymer PAG2 (6.0) QuencherPGMEA composition (100) (5.0) (2000)

Resist Polymer

Molecular weight (Mw)=7,500

Dispersity (Mw/Mn)=1.92

[Pattern Etching Test]

The produced resist under layer film compositions (Under layer filmcompositions 1 to 10, Comparative under layer film compositions 1 and 2)were each applied onto a 300-mm Si wafer having a SiO₂ film 80 nm thick,and baked at 350° C. for 60 seconds to form a resist under layer filmhaving a thickness of 100 nm. The baking atmosphere of the resist underlayer film was in air. The prepared silicon-containing middle layer filmcomposition was applied thereon and baked at 200° C. for 60 seconds toform a silicon-containing middle layer film having a thickness of 35 nm,and the ArF resist film composition was applied thereon and baked at105° C. for 60 seconds to form an ArF resist film having a thickness of100 nm.

Then, the Si wafer substrate on which the 3-layer film has been formedas mentioned above was exposed to light with an ArF liquid immersionexposure apparatus (NSR-S610C manufactured by Nikon Corporation, NA:1.30, σ: 0.98/0.65, 35° dipole s-polarized illumination, 6% halftonephase shift mask), baked at 100° C. for 60 seconds (PEB), and developedwith a 2.38 mass % tetramethylammonium hydroxide (TMAH) aqueous solutionfor 30 seconds to obtain a 43 nm 1:1 positive line and space pattern.

Then, the pattern was transferred to the silicon-containing middle layerfilm by dry etching using the formed resist pattern as a mask with anetching apparatus Telius manufactured by Tokyo Electron Ltd. In the samemanner, the pattern was transferred to the resist under layer film bydry etching using the silicon-containing middle layer film having thetransferred pattern as a mask. The pattern was further transferred tothe SiO₂ film by dry etching using the resist under layer film havingthe transferred pattern as a mask.

The etching condition was as follows.

Transferring Condition to Silicon-Containing Middle Layer Film

Chamber pressure 10.0 Pa RF power 1,500 W CF₄ gas flow rate 15 sccm(mL/min) O₂ gas flow rate 75 sccm (mL/min) Time 15 sec

Transferring Condition to Resist Under Layer Film

Chamber pressure 2.0 Pa RF power 500 W Ar gas flow rate 75 sccm (mL/min)O₂ gas flow rate 45 sccm (mL/min) Time 120 sec

Transferring Condition to SiO₂ Film

Chamber pressure 2.0 Pa RF power 2,200 W C₅F₁₂ gas flow rate 20 sccm(mL/min) C₂F₆ gas flow rate 10 sccm (mL/min) Ar gas flow rate 300 sccm(mL/min) O₂ gas flow rate 60 sccm (mL/min) Time 90 sec

Then, the wafer after etching was cut, and cross-section of the patternwas observed with an electron microscope (S-4700) manufactured byHitachi, Ltd., to compare pattern profiles after etching in each etchingstep and wiggling of the pattern after etching of the SiO₂ film. Theresult is given in Table 6.

TABLE 6 Profile Profile Wiggling of after after Profile pattern Patternetching for etching for after after Resist under profile transfer totransfer to etching for etching for layer film after middle under layertransfer to transfer to composition development layer film filmsubstrate substrate Example 3-1 Under layer Vertical Vertical VerticalVertical None film profile profile profile profile composition 1 Example3-2 Under layer Vertical Vertical Vertical Vertical None film profileprofile profile profile composition 2 Example 3-3 Under layer VerticalVertical Vertical Vertical None film profile profile profile profilecomposition 3 Example 3-4 Under layer Vertical Vertical VerticalVertical None film profile profile profile profile composition 4 Example3-5 Under layer Vertical Vertical Vertical Vertical None film profileprofile profile profile composition 5 Example 3-6 Under layer VerticalVertical Vertical Vertical None film profile profile profile profilecomposition 6 Example 3-7 Under layer Vertical Vertical VerticalVertical None film profile profile profile profile composition 7 Example3-8 Under layer Vertical Vertical Vertical Vertical None film profileprofile profile profile composition 8 Example 3-9 Under layer VerticalVertical Vertical Vertical None film profile profile profile profilecomposition 9 Example 3-10 Under layer Vertical Vertical VerticalVertical None film profile profile profile profile composition 10Comparative Comparative Vertical Vertical Vertical Vertical None example3-1 under layer profile profile profile profile film composition 1Comparative Comparative Vertical Vertical Vertical Vertical None example3-2 under layer profile profile profile profile film composition 2

The result shown in Table 6 demonstrates that the inventive resist underlayer film composition enabled an good pattern to be formed even afterdry etching, as well as the conventional resist under layer film. Inaddition, it was revealed that all under layer film compositions hadadequate dry-etching resistance.

What is claimed is:
 1. A resist under layer film composition comprisinga novolak resin having a repeating unit shown by the formula (1) andeither or both of a novolak resin having a repeating unit shown by theformula (2) and a bisnaphthol derivative shown by the formula (3),

wherein R¹ and R² represent a hydrogen atom, a linear, branched, orcyclic alkyl group having 1 to 10 carbon atoms, an alkenyl group having2 to 8 carbon atoms, an aryl group having 6 to 10 carbon atoms, or anaralkyl group having 7 to 10 carbon atoms, in which the alkyl group, thealkenyl group, the aryl group, and the aralkyl group may contain afluorine atom(s) and may further contain a hydroxyl group, an alkoxygroup, an acyl group, a sulfoxide group, a sulfo group, or an esterbond, and 10% or more of a total of R¹ and R² are groups containing atleast one fluorine atom; R³, R⁴, R¹¹, and R¹² represent a hydrogen atom,a hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, a linear,branched, or cyclic alkyl group having 1 to 10 carbon atoms, an alkenylgroup having 2 to 10 carbon atoms, or an aryl group having 6 to 10carbon atoms, in which the alkyl group, the alkenyl group, and the arylgroup may contain a hydroxyl group, an alkoxy group, an acyloxy group,an ether group, or a sulfide group; R¹⁸ and R¹⁹ represent a halogen atomor the same group as R³,R⁴, R¹¹, and R¹²; R⁵, R⁶, R¹³, R¹⁴, R²⁰, and R²¹represent a hydrogen atom, or R⁵, R¹³, and R²⁰ may bond to R⁶, R¹⁴, andR²¹ respectively to form an ether bond; R⁷ and R¹⁵ represent a hydrogenatom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having2 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms, inwhich the alkyl group, the alkenyl group, and the aryl group may containa hydroxyl group, an alkoxy group, an acyloxy group, an ether group, asulfide group, a chloro group, or a nitro group; R⁹, R¹⁰, R¹⁶, and R¹⁷represent a hydrogen atom, an acid-labile group, a glycidyl group, or alinear, branched, or cyclic alkyl, acyl, or alkoxycarbonyl group having1 to 10 carbon atoms; X₁, X₂, and X₃ represent a single bond or alinear, branched, or cyclic divalent hydrocarbon group having 1 to 38carbon atoms and optionally containing a hydroxyl group, a carboxylgroup, an ether group, or a lactone ring, when X₁ is a divalenthydrocarbon group, R⁵ and R⁶ may bond to carbon atoms in X₁ to form anether bond, when X₂ is a divalent hydrocarbon group, R¹³ and R¹⁴ maybond to carbon atoms in X₂ to form an ether bond, and when X₃ is adivalent hydrocarbon group, R²⁰ and R²¹ may bond to carbon atoms in X₃to form an ether bond; and a, b, c, d, g, h, i, j, k, l, m, and n areeach 1 or
 2. 2. The resist under layer film composition according toclaim 1, comprising the novolak resin having the repeating unit shown bythe formula (1), the novolak resin having the repeating unit shown bythe formula (2), and the bisnaphthol derivative shown by the formula(3).
 3. The resist under layer film composition according to claim 1,wherein the novolak resin having the repeating unit shown by the formula(1) contains one or more groups selected from the formulae (4)-1 to(4)-5 as R¹ and/or R² in the formula (1),

wherein R represents a hydrogen atom or an alkyl group having 1 to 4carbon atoms; R⁰ represents a hydrogen atom, a methyl group, an acetylgroup, or a trifluoroacetyl group; Rf represents a fluorine atom, alinear, branched, or cyclic alkyl group having 1 to 9 carbon atoms, analkenyl group having 2 to 8 carbon atoms, an aryl group having 6 to 10carbon, an aralkyl group having 7 to 10 carbon atoms, or an alkoxy grouphaving 1 to 10 carbon atoms, in which these groups contain at least onefluorine atom and may further contain a hydroxyl group or an alkoxygroup; R²² represents a hydrogen atom, a methyl group, or an ethylgroup; and R²³ and R²⁴ represent a hydrogen atom or a linear or branchedalkyl group having 1 to 5 carbon atoms.
 4. The resist under layer filmcomposition according to claim 2, wherein the novolak resin having therepeating unit shown by the formula (1) contains one or more groupsselected from the formulae (4)-1 to (4)-5 as R¹ and/or R² in the formula(1),

wherein R represents a hydrogen atom or an alkyl group having 1 to 4carbon atoms; R⁰ represents a hydrogen atom, a methyl group, an acetylgroup, or a trifluoroacetyl group; Rf represents a fluorine atom, alinear, branched, or cyclic alkyl group having 1 to 9 carbon atoms, analkenyl group having 2 to 8 carbon atoms, an aryl group having 6 to 10carbon, an aralkyl group having 7 to 10 carbon atoms, or an alkoxy grouphaving 1 to 10 carbon atoms, in which these groups contain at least onefluorine atom and may further contain a hydroxyl group or an alkoxygroup; R²² represents a hydrogen atom, a methyl group, or an ethylgroup; and R²³ and R²⁴ represent a hydrogen atom or a linear or branchedalkyl group having 1 to 5 carbon atoms.
 5. The resist under layer filmcomposition according to claim 2, wherein a total amount of the novolakresin having the repeating unit shown by the formula (2) and thebisnaphthol derivative shown by the formula (3) is 5 to 100 parts bymass with respect to 1 part by mass of the novolak resin having therepeating unit shown by the formula (1).
 6. The resist under layer filmcomposition according to claim 3, wherein a total amount of the novolakresin having the repeating unit shown by the formula (2) and thebisnaphthol derivative shown by the formula (3) is 5 to 100 parts bymass with respect to 1 part by mass of the novolak resin having therepeating unit shown by the formula (1).
 7. The resist under layer filmcomposition according to claim 4, wherein a total amount of the novolakresin having the repeating unit shown by the formula (2) and thebisnaphthol derivative shown by the formula (3) is 5 to 100 parts bymass with respect to 1 part by mass of the novolak resin having therepeating unit shown by the formula (1).
 8. The resist under layer filmcomposition according to claim 1, further comprising an organic solvent.9. The resist under layer film composition according to claim 1, furthercomprising an acid generator and/or a crosslinking agent.
 10. Apatterning process for forming a pattern in a substrate by lithography,comprising: forming a resist under layer film on a substrate to beprocessed by using the resist under layer film composition according toclaim 1; forming a silicon-containing middle layer film on the resistunder layer film by using a silicon-containing middle layer filmcomposition; forming a resist upper layer film on the silicon-containingmiddle layer film by using a resist upper layer film composition;forming a resist pattern in the resist upper layer film by exposure of apattern circuit region of the resist upper layer film and development;transferring the pattern to the silicon-containing middle layer film byetching using the resist upper layer film having the formed resistpattern as a mask; transferring the pattern to the resist under layerfilm by etching using the silicon-containing resist middle layer filmhaving the transferred pattern as a mask; forming the pattern in thesubstrate to be processed by etching using the resist under layer filmhaving the transferred pattern as a mask.
 11. A patterning process forforming a pattern in a substrate by lithography, comprising: forming aresist under layer film on a substrate to be processed by using theresist under layer film composition according to claim 1; forming aninorganic hard mask intermediate film selected from a silicon oxidefilm, a silicon nitride film, a silicon oxynitride film, a siliconcarbide film, a polysilicon film, a titanium nitride film, a titaniumoxide film, a titanium carbide film, a zirconium oxide film, and ahafnium oxide film on the resist under layer film; forming a resistupper layer film on the inorganic hard mask intermediate film by using aresist upper layer film composition; forming a resist pattern in theresist upper layer film by exposure of a pattern circuit region of theresist upper layer film and development; transferring the pattern to theinorganic hard mask intermediate film by etching using the resist upperlayer film having the formed resist pattern as a mask; transferring thepattern to the resist under layer film by etching using the inorganichard mask intermediate film having the transferred pattern as a mask;forming the pattern in the substrate to be processed by etching usingthe resist under layer film having the transferred pattern as a mask.12. A patterning process for forming a pattern in a substrate bylithography, comprising: forming a resist under layer film on asubstrate to be processed by using the resist under layer filmcomposition according to claim 1; forming an inorganic hard maskintermediate film selected from a silicon oxide film, a silicon nitridefilm, a silicon oxynitride film, a silicon carbide film, a polysiliconfilm, a titanium nitride film, a titanium oxide film, a titanium carbidefilm, a zirconium oxide film, and a hafnium oxide film on the resistunder layer film; forming an organic antireflection film on theinorganic hard mask intermediate film; forming a resist upper layer filmon the organic antireflection film by using a resist upper layer filmcomposition, thereby forming a 4-layer resist film; forming a resistpattern in the resist upper layer film by exposure of a pattern circuitregion of the resist upper layer film and development; transferring thepattern to the organic antireflection film and the inorganic hard maskintermediate film by etching using the resist upper layer film havingthe formed resist pattern as a mask; transferring the pattern to theresist under layer film by etching using the inorganic hard maskintermediate film having the transferred pattern as a mask; forming thepattern in the substrate to be processed by etching using the resistunder layer film having the transferred pattern as a mask.
 13. Apatterning process for forming a pattern in a substrate by lithography,comprising: forming a resist under layer film on a substrate to beprocessed by using the resist under layer film composition according toclaim 1; forming an inorganic hard mask intermediate film selected froma silicon oxide film, a silicon nitride film, a silicon oxynitride film,a silicon carbide film, a polysilicon film, a titanium nitride film, atitanium oxide film, a titanium carbide film, a zirconium oxide film,and a hafnium oxide film on the resist under layer film; forming ahydrocarbon film on the inorganic hard mask intermediate film by using ahydrocarbon film composition by spin coating; forming asilicon-containing middle layer film on the hydrocarbon film by using asilicon-containing middle layer film composition; forming a resist upperlayer film on the silicon-containing middle layer film by using a resistupper layer film composition, thereby forming a 5-layer resist film;forming a resist pattern in the resist upper layer film by exposure of apattern circuit region of the resist upper layer film and development;transferring the pattern to the silicon-containing middle layer film byetching using the resist upper layer film having the formed resistpattern as a mask; transferring the pattern to the hydrocarbon film byetching using the silicon-containing middle layer film having thetransferred pattern as a mask; transferring the pattern to the inorganichard mask intermediate film by etching using the hydrocarbon film havingthe transferred pattern as a mask; transferring the pattern to theresist under layer film by etching using the inorganic hard maskintermediate film having the transferred pattern as a mask; forming thepattern in the substrate to be processed by etching using the resistunder layer film having the transferred pattern as a mask.
 14. Thepatterning process according to claim 11, wherein the inorganic hardmask intermediate film is formed by a CVD method, an ALD method, or asputtering method.
 15. The patterning process according to claim 10,wherein the resist upper layer film composition does not contain apolymer having a silicon atom, and the etching of the resist under layerfilm using the silicon-containing middle layer film as a mask isperformed with an etching gas containing an oxygen gas or a hydrogengas.
 16. The patterning process according to claim 11, wherein theresist upper layer film composition does not contain a polymer having asilicon atom, and the etching of the resist under layer film using theinorganic hard mask intermediate film as a mask is performed with anetching gas containing an oxygen gas or a hydrogen gas.